Journal Article

FZJ-2017-04392

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Approaching Solar-Grade a-Si:H for Photovoltaic Applications via Atmospheric Pressure CVD Using a Trisilane-Derived Liquid Precursor

Cadiz Bedini, A. P. (Corresponding author)FZJ* ; Trieu, L. D. ; Muthmann, S. ; Rau, U.FZJ* ; Carius, R.FZJ*

2017
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/solr.201700030

Abstract: The article demonstrates the fabrication of a-Si:H thin films in a N2-filled glove box via atmospheric pressure chemical vapor deposition (APCVD) using a vaporized silicon hydride polymer/silicon nanoparticle composite ink prepared from trisilane (Si3H8). It is shown via Raman spectroscopy that the films exhibit good short and mid-range atomic order. Fourier transform infrared spectroscopy reveals a fairly compact microstructure and a hydrogen concentration of 13–18 at.%. Photothermal deflection spectroscopy demonstrates a sub band gap absorption only a factor of ∼6 higher than that of solar-grade plasma-enhanced CVD (PECVD) material. As a demonstration of the utility of our ink, c-Si wafer surface passivation layers are deposited resulting in effective minority charge carrier lifetimes exceeding 400 μs. These lifetimes constitute the as of yet highest reported values achieved using liquid precursors for bifacial coating without subsequent hydrogen radical treatment. The high electronic quality of the layers is shown via the fabrication of a n-i-p thin-film solar cell with an APCVD intrinsic absorber layer exhibiting an efficiency of 3.4% and hence, placing its photovoltaic performance among the highest reported for cells processed from the liquid phase and without a back reflector.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2017

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