Journal Article

FZJ-2017-06466

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Si(111) strained layers on Ge(111): Evidence for c ( 2 × 4 ) domains141

Zhachuk, R. (Corresponding author)Extern* ; Coutinho, J. ; Dolbak, A. ; Cherepanov, V.FZJ* ; Voigtländer, B.FZJ*

2017
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/15286  doi:10.1103/PhysRevB.96.085401

Abstract: The tensile-strained Si(111) layers grown on top of Ge(111) substrates are studied by combining scanning tunneling microscopy, low-energy electron diffraction, and first-principles calculations. It is shown that the layers exhibit c(2×4) domains, which are separated by domain walls along ⟨¯110⟩ directions. A model structure for the c(2×4) domains is proposed, which shows low formation energy and good agreement with the experimental data. The results of our calculations suggest that Ge atoms are likely to replace Si atoms with dangling bonds on the surface (rest-atoms and adatoms), thus significantly lowering the surface energy and inducing the formation of domain walls. The experiments and calculations demonstrate that when surface strain changes from compressive to tensile, the (111) reconstruction converts from dimer-adatom-stacking fault-based to adatom-based structures.

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2017

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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