Conference Presentation (After Call)

FZJ-2017-06752

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing

Glass, S. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Strangio, S. ; Schulte-Braucks, C.FZJ* ; Rieger, T.FZJ* ; Buca, D. M.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*

2017

Please use a persistent id in citations: http://hdl.handle.net/2128/15365

Abstract: In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)
2. 899 - ohne Topic (POF3-899) (POF3-899)

Appears in the scientific report 2017

---

Database coverage:

---