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| 020 | _ | _ | |a 978-3-030-15611-4 (print) |
| 020 | _ | _ | |a 978-3-030-15612-1 (electronic) |
| 024 | 7 | _ | |a 10.1007/978-3-030-15612-1_2 |2 doi |
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| 037 | _ | _ | |a FZJ-2018-03778 |
| 100 | 1 | _ | |a Rodenbücher, Christian |0 P:(DE-Juel1)142194 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Conductive AFM for nanoscale analysis of high-k dielectric metal oxides |
| 260 | _ | _ | |a Cham |c 2019 |b Springer |
| 295 | 1 | 0 | |a Electrical Atomic Force Microscopy for Nanoelectronics |
| 300 | _ | _ | |a 29 - 70 |
| 336 | 7 | _ | |a BOOK_CHAPTER |2 ORCID |
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| 490 | 0 | _ | |a NanoScience and Technology |
| 520 | _ | _ | |a Conductive atomic force microscopy has become a valuable tool for investigation of electronic transport properties with utmost lateral resolution. In this chapter, we prevent an overview about C-AFM applications to high-k semiconductors, which are key materials for future energy-efficient information technology. |
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| 773 | _ | _ | |a 10.1007/978-3-030-15612-1_2 |
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