Conductive AFM for nanoscale analysis of high-k dielectric metal oxides

Rodenbücher, Christian; Wojtyniak, Marcin; Szot, K.

doi:10.1007/978-3-030-15612-1_2

Contribution to a book

FZJ-2018-03778

Conductive AFM for nanoscale analysis of high-k dielectric metal oxides

Rodenbücher, C. (Corresponding author)FZJ* ; Wojtyniak, M. ; Szot, K.FZJ*

2019
Springer Cham
ISBN: 978-3-030-15611-4 (print), 978-3-030-15612-1 (electronic)

Electrical Atomic Force Microscopy for Nanoelectronics Cham : Springer, NanoScience and Technology 29 - 70 (2019) [10.1007/978-3-030-15612-1_2]

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Please use a persistent id in citations: doi:10.1007/978-3-030-15612-1_2

Abstract: Conductive atomic force microscopy has become a valuable tool for investigation of electronic transport properties with utmost lateral resolution. In this chapter, we prevent an overview about C-AFM applications to high-k semiconductors, which are key materials for future energy-efficient information technology.

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