Contribution to a conference proceedings

FZJ-2018-03835

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxy of direct bandgap group IV heterostructure lasers

von den Driesch, N. (Corresponding author)FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Zaumseil, P. ; Capellini, G. ; Hartmann, J.-M. ; Schroeder, T. ; Mantl, S.FZJ* ; Grutzmacher, D.FZJ* ; Buca, D. M.FZJ*

2017
IEEE

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Please use a persistent id in citations: doi:10.1109/GROUP4.2017.8082253

Abstract: We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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