% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Zaumseil:851089, author = {Zaumseil, P. and Hou, Y. and Schubert, M. A. and von den Driesch, N. and Stange, D. and Rainko, D. and Virgilio, M. and Buca, D. and Capellini, G.}, title = {{T}he thermal stability of epitaxial {G}e{S}n layers}, journal = {APL materials}, volume = {6}, number = {7}, issn = {2166-532X}, address = {Melville, NY}, publisher = {AIP Publ.}, reportid = {FZJ-2018-04797}, pages = {076108}, year = {2018}, abstract = {We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. $\%-12$ at. $\%$ range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.}, cin = {PGI-9 / JARA-FIT}, ddc = {620}, cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$}, pnm = {521 - Controlling Electron Charge-Based Phenomena (POF3-521)}, pid = {G:(DE-HGF)POF3-521}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000440603600010}, doi = {10.1063/1.5036728}, url = {https://juser.fz-juelich.de/record/851089}, }