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@ARTICLE{Zaumseil:851089,
      author       = {Zaumseil, P. and Hou, Y. and Schubert, M. A. and von den
                      Driesch, N. and Stange, D. and Rainko, D. and Virgilio, M.
                      and Buca, D. and Capellini, G.},
      title        = {{T}he thermal stability of epitaxial {G}e{S}n layers},
      journal      = {APL materials},
      volume       = {6},
      number       = {7},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2018-04797},
      pages        = {076108},
      year         = {2018},
      abstract     = {We report on the direct observation of lattice relaxation
                      and Sn segregation of GeSn/Ge/Si heterostructures under
                      annealing. We investigated strained and partially relaxed
                      epi-layers with Sn content in the 5 at. $\%-12$ at. $\%$
                      range. In relaxed samples, we observe a further strain
                      relaxation followed by a sudden Sn segregation, resulting in
                      the separation of a β-Sn phase. In pseudomorphic samples, a
                      slower segregation process progressively leads to the
                      accumulation of Sn at the surface only. The different
                      behaviors are explained by the role of dislocations in the
                      Sn diffusion process. The positive impact of annealing on
                      optical emission is also discussed.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000440603600010},
      doi          = {10.1063/1.5036728},
      url          = {https://juser.fz-juelich.de/record/851089},
}