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@ARTICLE{Horst:859059,
      author       = {Horst, Fabian and Farokhnejad, Atieh and Zhao, Qing-Tai and
                      Iniguez, Benjamin and Kloes, Alexander},
      title        = {2-{D} {P}hysics-{B}ased {C}ompact {DC} {M}odeling of
                      {D}ouble-{G}ate {T}unnel-{FET}s},
      journal      = {IEEE transactions on electron devices},
      volume       = {66},
      number       = {1},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2019-00010},
      pages        = {132-138},
      year         = {2019},
      abstract     = {This paper presents the derivation of a compact dc modeling
                      approach for the band-to-band tunneling current in
                      double-gate tunnel-field effect transistors (TFETs). The
                      physics-based model equations are solved in closed form by
                      including 2-D effects and are implemented in the hardware
                      description language Verilog-A. The verification of the
                      model is done in two steps. First, the modeling approach is
                      verified by TCAD Sentaurus simulation data of the band
                      diagram, the transfer current, and the output current
                      characteristics as well as the output conductance. The
                      modeling results show a good agreement with the TCAD data.
                      Then, measurement data of complementary nanowire
                      gate-all-around TFET devices are utilized to verify the
                      model and to show possible fields of application. As a part
                      of the verification, the benefits and limitations are
                      analyzed and discussed. The numerical stability and
                      flexibility of the model are pointed out by performing
                      simulations of a single-stage TFET inverter.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000454333500017},
      doi          = {10.1109/TED.2018.2856891},
      url          = {https://juser.fz-juelich.de/record/859059},
}