Contribution to a conference proceedings

FZJ-2019-00038

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

Farokhnejad, A. (Corresponding author) ; Graef, M. ; Horst, F. ; Liu, C.FZJ* ; Zhao, Q. T. (Collaboration author)FZJ* ; Iniguez, B. ; Lime, F. ; Kloes, A.

2017
IEEE

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Please use a persistent id in citations: doi:10.1109/ULIS.2017.7962584

Abstract: In this paper a compact model for intrinsic capacitances for Tunnel field-effect transistors (TFETs) is presented. The model is derived from the carrier concentration and current flowing the channel of a Si Double-Gate (DG) n-type TFET. It represents a particularly good estimation of TFET capacitances and the flexibility of this model makes it possible to apply it for single-gate or p-type TFETs as well. To verify the model, the results are compared with TCAD Sentaurus simulations as well as measurement data. In both case model shows satisfying results.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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