Journal Article

FZJ-2019-01294

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors531

Han, Q.FZJ* ; Tromm, T. C. U.FZJ* ; Hoffmann, M.Extern* ; Aleksa, P.FZJ* ; Schroeder, U. ; Schubert, J.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2018
IEEE New York, NY

This record in other databases:  

Please use a persistent id in citations: doi:10.1109/TED.2018.2863727

Abstract: The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e., with the decreasing FeC area), in contrast to the voltage dividing effect of regular dielectric capacitors. The ferroelectric polarization switching counteracts the effect of voltage dividing by introducing an additional charge onto the floating gate, which improves the SS and leads to the observed SS dependence. The SS improvement caused by the polarization switching is different from the negative capacitance effect, which is helpful to further understand the ferroelectric transistor.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

---

Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

---