Journal Article

FZJ-2019-01672

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices

La Torre, C. (Corresponding author) ; Zurhelle, A. F. ; Breuer, T. ; Waser, R.FZJ* ; Menzel, S.FZJ*

2019
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TED.2019.2892997

Abstract: Physics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations. This includes that models have to cover devices showing bipolar switching (BS) and complementary switching (CS). In contrast to BS devices, which store the information in (at least) one high and one low resistance state, CS devices use (at least) two high resistance states. Applications of CS devices range from passive crossbar arrays to novel logic-in-memory concepts. The coexistence of CS and BS modes in one device has been shown experimentally. Here, a physics-based compact model describing BS and CS consistently is presented. Besides modeling CS devices, the model improves the description of BS as it allows to reproduce and explain anomalies in the BS RESET process. The model includes ion drift and diffusion along the filament. The influence of different parameters on the drift–diffusion balance is discussed.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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