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| Home > Publications database > Vacancy doping and charge transport in B i 2 S 3 nanoparticle films for photovoltaic applications |
| Home > Publications database > Vacancy doping and charge transport in B i 2 S 3 nanoparticle films for photovoltaic applications |
| Journal Article | FZJ-2019-05161 |
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2019
APS
College Park, MD
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Please use a persistent id in citations: http://hdl.handle.net/2128/23134 doi:10.1103/PhysRevMaterials.3.105406
Abstract: Native point defect doping via thermal treatment is an easy and promising method to tune the electrical transport properties of semiconductors made for renewable-energy conversion. In this study, we investigate the vacancy doping of the lowly toxic semiconductor Bi2S3 using electrical conductivity as well as thermoelectric power measurements. We enhance the electrical conductivity of bismuth sulfide nanoparticle layers by more than four orders of magnitude by a stepwise thermal treatment in a moderate temperature range (300–480 K). Via thermoelectric power measurements we attribute this enhancement to an increase in charge-carrier mobility by two orders of magnitude and to an increase in charge-carrier density by more than two orders of magnitude. We find that the energetic position of the electron-doping sulfur vacancies of bismuth sulfide nanoparticles is significantly shallower than previously reported for bulk material. Subsequently, we implement Bi2S3 nanoparticles doped with sulfur vacancies by thermal annealing in photovoltaic devices using P3HT as an electron donor molecule. We find that annealing up to 383 K yields the best compromise between improving charge-carrier transport and increasing defect densities.
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