Journal Article

FZJ-2019-06522

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Phase Change Materials and Superlattices for Non‐Volatile Memories

Zhang, W. ; Wuttig, M. (Corresponding author)FZJ*

2019
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssr.201900130

Abstract: The global size of data doubles every two years and will reach 44 zettabytes by 2020. Such huge amount of data poses a serious challenge on data storage and processing. To further improve computing and power efficiencies, changes in computing architecture and hardware are urgently needed. Chalcogenide phase‐change material based random access memories (PRAMs) are one of the leading candidates for such purpose. PRAMs combine the advantages of non‐volatility and fast operation speed, and they have recently entered the global memory market as Storage‐Class Memories (SCMs), filling the performance gap between dynamic random access memories (DRAMs) and flash memory‐based solid state hard drives (SSDs). In addition, PRAMs hold the promise for subnanosecond memory operations and neuro‐inspired computing, which may lead to the development of universal memory and brain‐like computing devices. These novel devices are expected to result in a substantial improvement in computing and power efficiencies, owing to the fundamental change in memory hierarchy and computing architecture

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Contributing Institute(s):

1. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2019

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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