Journal Article

FZJ-2020-01072

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Antiferromagnetic Topological Insulator with Nonsymmorphic Protection in Two Dimensions

Niu, C. ; Mao, N. ; Huang, B. ; Mokrousov, Y.FZJ* ; Dai, Y. (Corresponding author)

2020
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/24358  doi:10.1103/PhysRevLett.124.066401

Abstract: The recent demonstration of topological states in antiferromagnets (AFMs) provides an exciting platform for exploring prominent physical phenomena and applications of antiferromagnetic spintronics. A famous example is the AFM topological insulator (TI) state, which, however, was still not observed in two dimensions. Using a tight-binding model and first-principles calculations, we show that, in contrast to previously observed AFM topological insulators in three dimensions, an AFM TI can emerge in two dimensions as a result of a nonsymmorphic symmetry that combines the twofold rotation symmetry and half-lattice translation. Based on the spin Chern number, Wannier charge centers, and gapless edge states analysis, we identify intrinsic AFM XMnY (X=Sr and Ba, Y=Sn and Pb) quintuple layers as experimentally feasible examples of predicted topological states with a stable crystal structure and giant magnitude of the nontrivial band gaps, reaching as much as 186 meV for SrMnPb, thereby promoting these systems as promising candidates for innovative spintronics applications.

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (PGI-1)
2. Quanten-Theorie der Materialien (IAS-1)
3. JARA-FIT (JARA-FIT)
4. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
2. Topological transport in real materials from ab initio (jiff40_20190501) (jiff40_20190501)

Appears in the scientific report 2020

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Database coverage:
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