%0 Journal Article
%A Yao, Zhirong
%A Cai, Lun
%A Meng, Lanxiang
%A Qiu, Kaifu
%A Lin, Wenjie
%A Jin, Jingsheng
%A Duan, Weiyuan
%A Ding, Kaining
%A Li, Shenghao
%A Ai, Bin
%A Liang, Zongcun
%A Shen, Hui
%T High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts
%J Physica status solidi / Rapid research letters Rapid research letters
%V 14
%N 6
%@ 1862-6270
%C Weinheim
%I Wiley-VCH
%M FZJ-2020-01873
%P 2000103
%D 2020
%X One of the challenges in fabricating high‐performance n‐type crystalline silicon (n‐type c‐Si) solar cells is the high‐quality n‐type c‐Si/metal contact. Schottky barriers are commonly found on the n‐type c‐Si/metal contact, which suppresses electron transportation. Herein, novel stacks of magnesium acetylacetonate (Mg(Acac)2)/magnesium (Mg)/silver (Ag) to form electron‐selective contacts for n‐type c‐Si solar cells are presented, which enables a dopant‐free process. An ohmic contact on n‐type c‐Si is formed using the Mg(Acac)2/Mg/Ag stacks. The transmission spectrum and ultraviolet photoelectron spectroscopy measurements show negligible conduction‐band offset and large valence‐band offset between Mg(Acac)2 and n‐type c‐Si, which indicates the electron‐transporting and hole‐blocking properties of Mg(Acac)2/n‐type c‐Si heterocontacts. Moreover, the contact resistivities (ρ c ) between the Mg(Acac)2/Mg/Ag electron‐selective heterocontacts and n‐type c‐Si substrates are lower than 10 mΩ cm2, which demonstrates the good electrode properties of the Mg(Acac)2/Mg/Ag stacks. The Mg(Acac)2/Mg/Ag electron‐selective stacks are applied on n‐type c‐Si solar cells with partial rear contact, and >20% efficiency is achieved, which is higher than that in a reference cell with only Ag contact. The stability of the n‐type c‐Si solar cell performance equipped with Mg(Acac)2/Mg/Ag contacts is verified under ambient conditions. This novel low‐temperature contact technique offers a reliable alternative for high‐performance n‐type c‐Si solar cells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000528615100001
%R 10.1002/pssr.202000103
%U https://juser.fz-juelich.de/record/875205