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024 7 _ |a 10.1002/pssr.202000103
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100 1 _ |a Yao, Zhirong
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245 _ _ |a High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts
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520 _ _ |a One of the challenges in fabricating high‐performance n‐type crystalline silicon (n‐type c‐Si) solar cells is the high‐quality n‐type c‐Si/metal contact. Schottky barriers are commonly found on the n‐type c‐Si/metal contact, which suppresses electron transportation. Herein, novel stacks of magnesium acetylacetonate (Mg(Acac)2)/magnesium (Mg)/silver (Ag) to form electron‐selective contacts for n‐type c‐Si solar cells are presented, which enables a dopant‐free process. An ohmic contact on n‐type c‐Si is formed using the Mg(Acac)2/Mg/Ag stacks. The transmission spectrum and ultraviolet photoelectron spectroscopy measurements show negligible conduction‐band offset and large valence‐band offset between Mg(Acac)2 and n‐type c‐Si, which indicates the electron‐transporting and hole‐blocking properties of Mg(Acac)2/n‐type c‐Si heterocontacts. Moreover, the contact resistivities (ρ c ) between the Mg(Acac)2/Mg/Ag electron‐selective heterocontacts and n‐type c‐Si substrates are lower than 10 mΩ cm2, which demonstrates the good electrode properties of the Mg(Acac)2/Mg/Ag stacks. The Mg(Acac)2/Mg/Ag electron‐selective stacks are applied on n‐type c‐Si solar cells with partial rear contact, and >20% efficiency is achieved, which is higher than that in a reference cell with only Ag contact. The stability of the n‐type c‐Si solar cell performance equipped with Mg(Acac)2/Mg/Ag contacts is verified under ambient conditions. This novel low‐temperature contact technique offers a reliable alternative for high‐performance n‐type c‐Si solar cells.
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700 1 _ |a Cai, Lun
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700 1 _ |a Meng, Lanxiang
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700 1 _ |a Qiu, Kaifu
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700 1 _ |a Lin, Wenjie
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700 1 _ |a Jin, Jingsheng
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700 1 _ |a Duan, Weiyuan
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700 1 _ |a Ding, Kaining
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700 1 _ |a Li, Shenghao
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700 1 _ |a Ai, Bin
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700 1 _ |a Liang, Zongcun
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700 1 _ |a Shen, Hui
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773 _ _ |a 10.1002/pssr.202000103
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