Home > Publications database > Proximity-induced spin-orbit coupling in graphene/ Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 heterostructures |
Journal Article | FZJ-2020-02421 |
; ; ; ; ;
2018
Inst.
Woodbury, NY
This record in other databases:
Please use a persistent id in citations: http://hdl.handle.net/2128/25142 doi:10.1103/PhysRevB.98.241402
Abstract: The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) which was grown on a hBN substrate by vapor solid synthesis. Phase coherent transport measurements, revealing weak localization, allow us to extract the carrier density-dependent phase coherence length lϕ. While lϕ increases with increasing carrier density in the hBN/graphene/hBN reference sample, it decreases in graphene/BSTS due to the proximity coupling of BSTS to graphene. The latter behavior results from D'yakonov-Perel'-type spin scattering in graphene with a large proximity-induced spin-orbit coupling strength of at least 2.5 meV.
![]() |
The record appears in these collections: |