Dry-transferred CVD graphene for inverted spin valve devices

Drögeler, Marc; Beschoten, Bernd; Banszerus, Luca; Watanabe, Kenji; Stampfer, Christoph; Taniguchi, Takashi; Volmer, Frank

doi:10.1063/1.5000545

Journal Article

FZJ-2020-02434

Dry-transferred CVD graphene for inverted spin valve devices

Drögeler, M.RWTH* ; Banszerus, L.RWTH* ; Volmer, F.RWTH* ; Taniguchi, T. ; Watanabe, K. ; Beschoten, B.FZJ*RWTH* ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2017
American Inst. of Physics Melville, NY

Applied physics letters 111(15), 152402 - (2017) [10.1063/1.5000545]

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Please use a persistent id in citations: http://hdl.handle.net/2128/25173 doi:10.1063/1.5000545

Abstract: Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pick-up technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process where the CVD-graphene/hBN stack is first patterned into a bar and then transferred by a second larger hBN crystal onto spin valve electrodes and (ii) a direct transfer of a CVD-graphene/hBN stack. We report record high spin lifetimes in CVD graphene of up to 1.75 ns at room temperature. Overall, the performances of our devices are comparable to devices fabricated from exfoliated graphene also revealing nanosecond spin lifetimes. We expect that our dry transfer methods pave the way towards more advanced device geometries not only for spintronic applications but also for CVD-graphene-based nanoelectronic devices in general where patterning of the CVD graphene is required prior to the assembly of final van der Waals heterostructures.We acknowledge funding from the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship and the Deutsche Forschungsgemeinschaft (BE 2441/9-1) and support by the Helmholtz Nano Facility (HNF)36 at the Forschungszentrum Jülich. Growth of hexagonal boron nitride crystals was supported by the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI Grant Nos. JP26248061, JP15K21722, and JP25106006.

Classification:

ddc:530

Contributing Institute(s):

Research Program(s):

522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Database coverage:
Medline

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