Journal Article

FZJ-2020-02707

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Temperature-dependent resistivity of alternative metal thin films

Siniscalchi, M. ; Tierno, D. ; Moors, K.FZJ* ; Tőkei, Z. ; Adelmann, C. (Corresponding author)

2020
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/25435  doi:10.1063/5.0015048

Abstract: The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness, whereas the TCR of Cu increases strongly with the decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin-film resistivity model that takes into account phonon, surface, and grain boundary scattering. The results indicate that the thin-film resistivity of Ru, Co, and Ir is dominated by grain boundary scattering, whereas that of Cu is strongly influenced by surface scattering.This work was supported by imec's industrial affiliation program on nano-interconnects. M.S. acknowledges co-funding by the Erasmus+ program of the European Union. The authors would like to thank Sofie Mertens and Thomas Witters (imec) for the support of the PVD depositions as well as imec's Materials and Components Analysis (MCA) Laboratory for the electron micrographs, the atomic force microscopy, and the Rutherford backscattering measurements.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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