Contribution to a book

FZJ-2020-03668

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6

Wirths, S. (Corresponding author)FZJ* ; Buca, D. M.FZJ* ; Tiedemann, A.FZJ* ; Holländer, B.FZJ* ; Bernardy, P.FZJ* ; Stoica, T.FZJ* ; Grützmacher, D.FZJ* ; Mantl, S.FZJ*

2013
Electrochemical Society (ECS) Pennington, NJ

This record in other databases:    

Please use a persistent id in citations: doi:10.1149/05009.0885ecst

---

Contributing Institute(s):

1. JARA-FIT (JARA-FIT)
2. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

---