Contribution to a book

FZJ-2020-03740

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters

von den Driesch, N. (Corresponding author)FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Povstugar, I.FZJ* ; Breuer, U.FZJ* ; Ikonic, Z. ; Hartmann, J.-M. ; Schubert, M. A. ; Capellini, G. ; Sigg, H. ; Mantl, S.FZJ* ; Grützmacher, D.FZJ* ; Buca, D. M.FZJ*

2018
Pennington, NJ

This record in other databases:  

Please use a persistent id in citations: doi:10.1149/08607.0189ecst

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)
4. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; SCOPUS

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