Bias Voltage DAC Operating at Cryogenic Temperatures for Solid-State Qubit Applications

Vliex, P.; Grewing, C.; Kruth, A.; Heinen, Stefan; van Waasen, S.; Nielinger, D.; Degenhardt, C.

doi:10.1109/LSSC.2020.3011576

Journal Article

FZJ-2020-04647

Bias Voltage DAC Operating at Cryogenic Temperatures for Solid-State Qubit Applications

Vliex, P. (Corresponding author)FZJ* ; Degenhardt, C.FZJ* ; Grewing, C.FZJ* ; Kruth, A.FZJ* ; Nielinger, D.FZJ* ; van Waasen, S.FZJ* ; Heinen, S.

2020
IEEE New York, NY

IEEE solid-state circuits letters 3, 218 - 221 (2020) [10.1109/LSSC.2020.3011576]

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Please use a persistent id in citations: http://hdl.handle.net/2128/26235 doi:10.1109/LSSC.2020.3011576

Abstract: A scalable eight channel DAC designed in a TSMC 65-nm CMOS technology for generation of solid-state quantum bit (qubit) bias voltages is presented. Measurement results of the DAC and some additional auxiliary components like an on-chip amplifier and sigma-delta modulator at 6 K are discussed. With a low-power consumption of 2.7 μW per channel, the DAC fulfills the requirements to be placed next to qubits inside a mixing chamber of a dilution refrigerator, showing a promising way for scaling qubit numbers toward a quantum computer.

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