Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.; Zhao, Q. T.; Buca, D.; Breuer, U.; Mantl, S.; Knoch, J.

doi:10.1063/1.3284089

Journal Article

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.FZJ* ; Knoch, J. ; Buca, D.FZJ* ; Zhao, Q. T.FZJ* ; Breuer, U.FZJ* ; Mantl, S.FZJ*

2010
American Institute of Physics Melville, NY

Journal of applied physics 107, 044510-6 (2010) [10.1063/1.3284089]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17227 doi:10.1063/1.3284089

Abstract: We present a systematic analysis of arsenic dopant segregation during nickel silicide formation. The slopes and concentrations of the arsenic dopant profiles at the NiSi/Si interface have been studied as a function of implantation energy, implantation dose, and NiSi thickness. Silicidation induced dopant segregation conserves the dopant slope at the silicide/silicon interface up to NiSi thicknesses of three times the as-implanted peak depth before degrading. Best slopes and highest dopant concentrations are obtained for low implantation energies and thin NiSi layers. We also demonstrate that the steepness of the dopant profile at the NiSi/Si interface can be significantly improved through a two-step annealing process for NiSi formation. For As, 1 keV, 1x10(15) cm(-2), and a 17 nm NiSi layer, a NiSi/Si junction with a dopant slope of 3.2 nm/decade has been obtained. An effective Schottky barrier of Phi(SB)=0.12 eV was determined by low temperature measurements of Schottky diodes with 20 nm NiSi formed by an optimized annealing process.

Keyword(s): J ; annealing (auto) ; arsenic (auto) ; doping profiles (auto) ; elemental semiconductors (auto) ; ion implantation (auto) ; nickel compounds (auto) ; Schottky barriers (auto) ; segregation (auto) ; semiconductor doping (auto) ; semiconductor-metal boundaries (auto) ; silicon (auto)

Classification:

Physics, Applied

Note: The authors thank their former colleague Dr. M. Zhang for discussions and his valuable comments. This research has received Nanosil funding from the European Community (FP7, Grant No. 216171) and from the German Federal Ministry of Education via the MEDEA + project DECISIF (Grant No. 2T104).

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Appears in the scientific report 2010

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OpenAccess