Contribution to a conference proceedings/Contribution to a book

FZJ-2021-01384

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Photomixing THz Generation from Nitrogen-Ion–Implanted GaAs Metal-Semiconductor-Metal Diodes Enhanced by a Bragg Mirror

Chen, G. (Corresponding author) ; Mikulics, M.FZJ* ; Adam, R.FZJ* ; Pericolo, A. ; Serafini, J. ; Preble, S. ; Cheng, J. ; Chimera, C. ; Komissarov, I. ; Hardtdegen, H. H.FZJ* ; Sobolewski, R.

2020
Springer814959 Tokyo

This record in other databases:  

Please use a persistent id in citations: doi:10.1109/IRMMW-THz46771.2020.9370390

Abstract: We demonstrate that a nitrogen-implanted GaAs can be successfully implemented as a tunable, THz frequency range photomixer, optimized for the best performance for optical excitation in the 760-800 nm range. The latter was obtained by fabricating a metal-semiconductor-metal diode on top of a Bragg mirror structure and resulted in a clear enhancement of the THz radiation emission in photomixing experiments.

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Contributing Institute(s):

1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)
2. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2021

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Database coverage:
; BIOSIS Previews ; Current Contents - Life Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection ; Zoological Record

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