| Hauptseite > Publikationsdatenbank > Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs | 
| Contribution to a conference proceedings | FZJ-2021-01386 | 
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2020
Springer814959
Tokyo
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Please use a persistent id in citations: doi:10.1109/IRMMW-THz46771.2020.9370531
Abstract: Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers.
        
        
        
        
         
        
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