Journal Article

FZJ-2021-02533

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, C.FZJ* ; Cüppers, F.FZJ* ; Payvand, M. ; Dittmann, R.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Menzel, S. (Corresponding author)FZJ*

2021
Frontiers Research Foundation Lausanne

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Please use a persistent id in citations: http://hdl.handle.net/2128/27910  doi:10.3389/fnins.2021.661856

Abstract: With the arrival of the Internet of Things (IoT) and the challenges arising from Big Data, neuromorphic chip concepts are seen as key solutions for coping with the massive amount of unstructured data streams by moving the computation closer to the sensors, the so-called “edge computing.” Augmenting these chips with emerging memory technologies enables these edge devices with non-volatile and adaptive properties which are desirable for low power and online learning operations. However, an energy- and area-efficient realization of these systems requires disruptive hardware changes. Memristor-based solutions for these concepts are in the focus of research and industry due to their low-power and high-density online learning potential. Specifically, the filamentary-type valence change mechanism (VCM memories) have shown to be a promising candidate In consequence, physical models capturing a broad spectrum of experimentally observed features such as the pronounced cycle-to-cycle (c2c) and device-to-device (d2d) variability are required for accurate evaluation of the proposed concepts. In this study, we present an in-depth experimental analysis of d2d and c2c variability of filamentary-type bipolar switching HfO2/TiOx nano-sized crossbar devices and match the experimentally observed variabilities to our physically motivated JART VCM compact model. Based on this approach, we evaluate the concept of parallel operation of devices as a synapse both experimentally and theoretically. These parallel synapses form a synaptic array which is at the core of neuromorphic chips. We exploit the c2c variability of these devices for stochastic online learning which has shown to increase the effective bit precision of the devices. Finally, we demonstrate that stochastic switching features for a pattern classification task that can be employed in an online learning neural network.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 523 - Neuromorphic Computing and Network Dynamics (POF4-523) (POF4-523)
2. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
3. Advanced Computing Architectures (aca_20190115) (aca_20190115)
4. MNEMOSENE - Computation-in-memory architecture based on resistive devices (780215) (780215)
5. Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich (16ES1133K) (16ES1133K)

Appears in the scientific report 2021

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