An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

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Home > Publications database > An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing > Access to Fulltext

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An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing - FZJ-2021-03498

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