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Journal Article | FZJ-2022-01762 |
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2022
Wiley
Chichester
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Please use a persistent id in citations: http://hdl.handle.net/2128/32698 doi:10.1002/pip.3493
Abstract: In this work, we propose a route to achieve a certified efficiency of up to 24.51% for silicon heterojunction (SHJ) solar cell on a full-size n-type M2 monocrystalline-silicon Cz wafer (total area, 244.53 cm2) by mainly improving the design of the hydrogenated intrinsic amorphous silicon (a-Si:H) on the rear side of the solar cell and the back reflector. A dense second intrinsic a-Si:H layer with an optimized thickness can improve the vertical carrier transport, resulting in an improved fill factor (FF). In order to reduce the plasmonic absorption at the back reflector, a low-refractive-index magnesium fluoride (MgF2) is deposited before the Ag layer; this leads to an improved gain of short circuit current density (Jsc). In total, together with MgF2 double antireflection coating and other fine optimizations during cell fabrication process, ~1% absolute efficiency enhancement is finally obtained. A detailed loss analysis based on Quokka3 simulation is presented to confirm the design principles, which also gives an outlook of how to improve the efficiency further.
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