Journal Article

FZJ-2022-01767

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices

Andrade, J. M. M. (Corresponding author) ; Rosário, C. M. M. ; Menzel, S.FZJ* ; Waser, R. ; Sobolev, N. A.

2022
American Physical Society College Park, Md. [u.a.]

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Please use a persistent id in citations: http://hdl.handle.net/2128/30923  doi:10.1103/PhysRevApplied.17.034062

Abstract: Redox-based resistive random access memories (ReRAMs) are promising candidate devices for new memory and computing paradigms. However, the fundamental mechanisms that rule the conduction in these devices are still heavily debated. The present work focuses on studying one model for the conduction, the quantum point contact (QPC), and specifically a single-subband approximation (SSA) to this model. With this intent, Pt(20 nm)/Ta(15 nm)Ta2O5(5 nm)/Pt(20 nm) resistive switching devices are fabricated and electrically characterized by measuring current-voltage (I-V) curves in both resistance states. The QPC model has been found to be hard to apply, as the starting parameters have a strong influence on the fitting results. On the other hand, the SSA has proved its ability to provide good fits to the data and to do so better than other typical conduction mechanisms considered. However, its physical basis is criticized and it is concluded that in the devices studied, multiple subbands likely contribute to the conduction, in direct opposition to the assumptions made in such an approximation. A reinterpretation of the parameters of the SSA is proposed, to reconcile the increased performance with greater physical accuracy. Beyond that, the main challenges and difficulties regarding the application of the QPC to the case of valence-change-based ReRAM are discussed.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2022

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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