| Home > Publications database > Ternary Vss-V3Si-V5SiB2 Eutectic Formation in the V-Si-B System |
| Journal Article | FZJ-2022-01914 |
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2022
Elsevier
Lausanne
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Please use a persistent id in citations: http://hdl.handle.net/2128/31023 doi:10.1016/j.jallcom.2022.163722
Abstract: The solidification behavior close to the ternary Vss-V3Si-V5SiB2 eutectic reaction in the V-Si-B system has been experimentally investigated via arc-melting. According to the microstructure investigation, which is performed by SEM observations, EDS and EBSD measurements and XRD analysis, the composition of the ternary eutectic reaction has been determined at V-9Si-6.5B (at%). Its microstructures in two different sample sections with different cooling rates were further investigated and compared with the calculated result of the developed eutectic growth theory based on the Jackson-Hunt model to reveal the competitive solidification behavior between the two-phase Vss-V5SiB2 and three-phase Vss-V3Si-V5SiB2 eutectic growth. As a result, the liquidus projection around the ternary eutectic reaction was modified and the cross section of the ternary Vss-V3Si-V5SiB2 eutectic coupled zone along the monovariant Vss-V5SiB2 and V3Si-V5SiB2 reaction lines was schematically proposed.
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