Journal Article

FZJ-2022-03955

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs

Mayahinia, M. ; Singh, A. ; Bengel, C.FZJ* ; Wiefels, S.FZJ* ; Lebdeh, M. A. ; Menzel, S.FZJ* ; Wouters, D. J. ; Gebregiorgis, A. ; Bishnoi, R. ; Joshi, R. ; Hamdioui, S.

2022
Association for Computing Machinery New York, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/32184  doi:10.1145/3451212

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)
4. MNEMOSENE - Computation-in-memory architecture based on resistive devices (780215) (780215)

Appears in the scientific report 2022

---

Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

---