Journal Article

PreJuSER-9225

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings

Radtke, C. ; Krug, C. ; Soares, G. V. ; Baumvol, I. J. R. ; Lopes, J. M. J.FZJ* ; Durgun Özben, E.FZJ* ; Nichau, A.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ*

2010
Soc. Pennington, NJ

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Please use a persistent id in citations: doi:10.1149/1.3322517

Abstract: $LaLuO_3$ films deposited on Ge were submitted to different postoxidation annealings. Electrical characterization revealed that such treatments can have beneficial effects on the characteristics of the dielectric layer. Nevertheless, $LaLuO_3$ interface characteristics are modified depending on annealing parameters and mostly on the employed atmosphere. Electrical characterization was correlated with physicochemical properties of the resulting structures, evidencing that oxygen annealing, in certain conditions, promotes substrate oxidation. A more stable interface without the formation of excessive Ge oxidized species was achieved using $N_2$.

Note: The work at UFRGS and UCS was supported by MCT/CNPq, CAPES, and FAPERGS. The work at Juelich IBN1-IT was partially supported by Nanosil.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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