Journal Article

PreJuSER-38052

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Full silicidation process for making CoSi2 on SiO2

Zhao, Q. T.FZJ* ; Rije, E.FZJ* ; Lenk, S.FZJ* ; Bay, H.FZJ* ; Mantl, S.FZJ*

2004
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1974  doi:10.1063/1.1728299

Abstract: A silicidation process was developed to produce high-quality CoSi2 directly on SiO2, which can be used for metal gates of metal-oxide-semiconductor field-effect transistors (MOSFETs). Normally, the formation of a CoSi2 layer on SiO2 is very difficult because of the requirement for an exact Co/Si thickness ratio. In our process, an additional Si layer was deposited after the first rapid thermal processing (RTP) at 500 degreesC and selective etching of the unreacted Co. The additional Si layer provided a Si supply for the second RTP at a higher temperature. This method allows the Co layer thickness to be varied over a fairly large range, and in addition, the microstructure of the silicide layer and the CoSi2/SiO2 interface were substantially improved. (C) 2004 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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