Journal Article

PreJuSER-39735

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Defect-induced lateral chemical-heterogenneity at Ni/GaN interface and its effect on the electronic properties of the interface

Barinov, A. ; Gregoratti, L. ; Kaulich, B. ; Kiskinova, I. Z. ; Rizzi, A.FZJ*

2001
American Institute of Physics Melville, NY

Please use a persistent id in citations: http://hdl.handle.net/2128/1976

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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Database coverage:

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