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| Hauptseite > Publikationsdatenbank > Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors |
| Hauptseite > Publikationsdatenbank > Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors |
| Journal Article | FZJ-2023-03758 |
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2023
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/admi.202300585 doi:10.34734/FZJ-2023-03758
Abstract: The transport and noise properties of fabricated, high-performance,gate-all-around silicon liquid-gated nanowire field-effect transistor devices areinvestigated in different concentrations of MgCl2solutions. The criticalconcentration of MgCl2solution for charge inversion at the solid-liquidinterface is verified using noise spectroscopy and confirmed using thecapacitance-voltage measurement technique. In this study, it is found that theHooge parameter (𝜶H) and the equivalent input noise (SU) can effectivelyreflect the ion behavior on the surface of the nanowire. Moreover, the noisecurves for𝜶Hand SUindicate two turning points at concentrations of 10−4and 10−1m for a peak and a valley, respectively. The noise transformation isrelated to the behavior of ions near the solid-liquid interface in solutions withdifferent MgCl2concentrations is revealed. The results show that noisespectroscopy is a powerful method for monitoring charge dynamic processesin the research field of biosensors.
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