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| Home > Publications database > Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K |
| Preprint | FZJ-2024-00549 |
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2023
arXiv
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Please use a persistent id in citations: doi:10.48550/ARXIV.2312.06267 doi:10.34734/FZJ-2024-00549
Abstract: Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.
Keyword(s): Applied Physics (physics.app-ph) ; Materials Science (cond-mat.mtrl-sci) ; FOS: Physical sciences
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