Conference Presentation (Invited)

FZJ-2024-00969

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures

Zhao, Q.-T. (Corresponding author)FZJ*

2023

Abstract: Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics. In this presentation, we will discuss our research on Si and GeSn nanowire GAA FETs, with a particular emphasis on their steep slope switching at cryogenic temperatures. Our study has significant implications for the development of cryogenic computing applications.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)
2. DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876) (422581876)

Appears in the scientific report 2023

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