Journal Article

FZJ-2024-00994

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Low contact resistance of NiGeSn on n-GeSn

Sun, J. (Corresponding author)FZJ* ; Han, Y.FZJ* ; Junk, Y.FZJ* ; Concepción, O.FZJ* ; Bae, J.-H.FZJ* ; Grützmacher, D.FZJ* ; Buca, D.FZJ* ; Zhao, Q.-T.FZJ*

2024
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2023.108814  doi:10.34734/FZJ-2024-00994

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)
2. Verbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074) (16ES1074)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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