Grant period | 2019-10-01 - 2023-09-30 |
Funding body | Federal Ministry of Education and Research |
BMBF | |
Grant number | grant.8715798 |
Identifier | G:(BMBF)16ES1074 |
All known publications ...
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Journal Article
Low contact resistance of NiGeSn on n-GeSn
Solid state electronics 211, 108814 - (2024) [10.1016/j.sse.2023.108814]
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Contribution to a conference proceedings
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 2023
IEEE 1-2 (2023) [10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252]
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Conference Presentation (Panel discussion)
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), VLSI-TSA, HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 2023
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Conference Presentation (Other)
Low contact resistance of NiGeSn on n-GeSn
EUROSOI-ULIS 2023, TarragonaTarragona, Spain, 10 May 2023 - 12 May 2023
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Contribution to a conference proceedings
Vertical gate-all-around SiGeSn/GeSn/SiGeSn nanowire nFETs
Intern. Conf. Solid State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 2023
PS 1-13 (2023)
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Journal Article
CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
ACS photonics 8(7), 2166 - 2173 (2021) [10.1021/acsphotonics.1c00617]
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All known publications ...
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