Verbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen

Grant period2019-10-01 - 2023-09-30
Funding bodyFederal Ministry of Education and Research
 BMBF
Grant numbergrant.8715798
IdentifierG:(BMBF)16ES1074

 

Recent Publications

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;
Low contact resistance of NiGeSn on n-GeSn
Solid state electronics 211, 108814 - () [10.1016/j.sse.2023.108814] Embargoed OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;  ;
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 20232023-04-172023-04-20 IEEE 1-2 () [10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Panel discussion)  ;  ;  ;  ;  ;  ;  ;  ;  ;
Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), VLSI-TSA, HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 20232023-04-172023-04-20 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;
Low contact resistance of NiGeSn on n-GeSn
EUROSOI-ULIS 2023, TarragonaTarragona, Spain, 10 May 2023 - 12 May 20232023-05-102023-05-12 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;
Vertical gate-all-around SiGeSn/GeSn/SiGeSn nanowire nFETs
Intern. Conf. Solid State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 20232023-09-052023-09-08 PS 1-13 () BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
ACS photonics 8(7), 2166 - 2173 () [10.1021/acsphotonics.1c00617] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 


 Record created 2021-09-20, last modified 2021-09-20



Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)