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| Home > Publications database > In-Plane Anisotropy of Electrical Transport in Y0.85Tb0.15Ba2Cu3O7−x Films |
| Journal Article | FZJ-2024-01019 |
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2024
MDPI
Basel
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Please use a persistent id in citations: doi:10.3390/ma17030558 doi:10.34734/FZJ-2024-01019
Abstract: We fabricated high-quality c-axis-oriented epitaxial YBa2Cu3O7−x films with 15% of the yttrium atoms replaced by terbium (YTBCO) and studied their electrical properties. The Tb substitution reduced the charge carrier density, resulting in increased resistivity and decreased critical current density compared to pure YBa2Cu3O7−x films. The electrical properties of the YTBCO films showed an in-plane anisotropy in both the superconducting and normal states that, together with the XRD data, provided evidence for, at least, a partially twin-free film. Unexpectedly, the resistive transition of the bridges also demonstrated the in-plane anisotropy that could be explained within the framework of Tinkham’s model of resistive transition and the Berezinskii–Kosterlitz–Thouless (BKT) model, depending on the sample parameters. Measurements of the differential resistance in the temperature range of the resistive transition confirmed the occurrence of the BKT transition in the YTBCO bridges. Therefore, we consider the YTBCO films to be a promising platform for both the fabrication of devices with high kinetic inductance and fundamental research on the BKT transition in cuprate superconductors.
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