Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Xue, Ran; Trellenkamp, Stefan; Tu, Jhih-Sian; Struck, Tom; Bluhm, Hendrik; Humpohl, Simon; Beer, Max; Seidler, Inga; Schreiber, Lars R.

doi:10.48550/ARXIV.2306.16375

Preprint

FZJ-2024-01624

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Xue, R. ; Beer, M. ; Seidler, I. ; Humpohl, S. ; Tu, J.-S. ; Trellenkamp, S. ; Struck, T.FZJ* ; Bluhm, H.FZJ* ; Schreiber, L. R. (Corresponding author)FZJ*

2023
arXiv

arXiv (2023) [10.48550/ARXIV.2306.16375]

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Please use a persistent id in citations: doi:10.48550/ARXIV.2306.16375 doi:10.34734/FZJ-2024-01624

Abstract: The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

Keyword(s): Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ; Quantum Physics (quant-ph) ; FOS: Physical sciences

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