Journal Article

FZJ-2024-02247

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Zhang, Y.FZJ* ; Boichuk, N.FZJ* ; Pustovyi, D.FZJ* ; Chekubasheva, V.FZJ* ; Long, H.FZJ* ; Petrychuk, M.FZJ* ; Vitusevich, S. (Corresponding author)FZJ*

2024
Wiley-VCH Verlag GmbH & Co. KG Weinheim

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Please use a persistent id in citations: doi:10.1002/aelm.202300855  doi:10.34734/FZJ-2024-02247

Abstract: High-quality liquid gate-all-around (LGAA) silicon nanowire (NW) field-effect transistor (FET) biosensors are fabricated and studied their properties in 1 mM phosphate-buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behavior of FET with a linear dependence on voltage is registered in the output current-voltage (I-VM) characteristics with M=1. At drain-source voltage VDS > 0.6 V, the I-V characteristics with stronger power M are revealed. It is shown that the current in LGAA NW FETs follows current proportional to voltage in power M = 4 dependence on small liquid gate voltages. Transport and noise spectroscopy analyses demonstrate that the obtained results are associated with the space-charge-limited current (SCLC) effect. Moreover, a strong two-level random telegraph signal (RTS) is found in the region corresponding to SCLC at VDS values exceeding 0.6 V. The RTS related to single trap phenomena results in a well-resolved Lorentzian component of noise spectra. The results demonstrate that the SCLC and two-level RTS phenomenon are correlated effects. They should be taken into account during the development of single-trap-based devices, including biosensors.

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Contributing Institute(s):

1. Bioelektronik (IBI-3)

Research Program(s):

1. 5241 - Molecular Information Processing in Cellular Systems (POF4-524) (POF4-524)

Appears in the scientific report 2024

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