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| Hauptseite > Publikationsdatenbank > Current-driven magnetoresistance in van der Waals spin-filter antiferromagnetic tunnel junctions with Mn Bi 2 Te 4 |
| Hauptseite > Publikationsdatenbank > Current-driven magnetoresistance in van der Waals spin-filter antiferromagnetic tunnel junctions with Mn Bi 2 Te 4 |
| Journal Article | FZJ-2024-02837 |
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2023
American Physical Society
College Park, Md. [u.a.]
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Please use a persistent id in citations: doi:10.1103/PhysRevApplied.20.044056 doi:10.34734/FZJ-2024-02837
Abstract: The field of two-dimensional magnetic materials has paved the way for the development of spintronics and nanodevices with other functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has garnered significant interest. In this work, we present a theoretical investigation of the behavior of MnBi2Te4 devices based on the nonequilibrium Green’s function method. Our results show that the current-voltage (I-V) characteristics can be influenced significantly by controlling the length of the device and bias voltage and thus allow us to manipulate the tunneling magnetoresistance (TMR) with an external bias voltage. This can be further influenced by the presence of the boron nitride layer, which shows significantly enhanced TMR by selectively suppressing specific spin channels for different magnetic configurations. By exploiting this mechanism, the observed TMR value reaches up to 3690%, which can be attributed to the spin-polarized transmission channel and the projected local density of states. Our findings on the influence of structural and magnetic configurations on the spin-polarized transport properties and TMR ratios give the potential implementation of antiferromagnetic vdW layered materials in ultrathin spintronics.
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