Journal Article

FZJ-2024-04963

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices

Qiu, D. (Corresponding author) ; Lambertz, A.FZJ* ; Duan, W. (Corresponding author)FZJ* ; Mazzarella, L. ; Wagner, P. ; Morales-Vilches, A. B. ; Yang, G. ; Procel, P. ; Isabella, O. ; Stannowski, B. ; Ding, K. (Corresponding author)FZJ*

2024
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/advs.202403728  doi:10.34734/FZJ-2024-04963

Abstract: Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiOx:H and hydrogenated amorphous silicon oxide (a-SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

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Contributing Institute(s):

1. Photovoltaik (IMD-3)

Research Program(s):

1. 1213 - Cell Design and Development (POF4-121) (POF4-121)

Appears in the scientific report 2024

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