Journal Article

FZJ-2024-05554

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

Stasner, P. (Corresponding author) ; Kopperberg, N. ; Schnieders, K.FZJ* ; Hennen, T. ; Wiefels, S.FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ* ; Wouters, D. J.

2024
Royal Society of Chemistry Cambridge

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Please use a persistent id in citations: doi:10.1039/D3NH00520H  doi:10.34734/FZJ-2024-05554

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)
4. BMBF 03ZU1106AB - NeuroSys: "Memristor Crossbar Architekturen (Projekt A) - B" (BMBF-03ZU1106AB) (BMBF-03ZU1106AB)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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