BMFTR 03ZU2106AB
NeuroSys: KI-anwendungsspezifische Technologiereifung memristiver Bauteile (Projekt A) - Teilvorhaben B
| Coordinator | Lemme, Max Christian ; Dittmann, Regina |
| Grant period | 2025-01-01 - 2027-12-31 |
| Funding body | Bundesministerium für Forschung, Technologie und Raumfahrt |
| BMFTR | |
| Further information: | Homepage |
| Identifier | G:(BMBF)03ZU2106AB |
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Journal Article - Online First
The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO 2 ‐Based Memristive Devices
Advanced electronic materials 1, e00891 (2026) [10.1002/aelm.202500891]
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Poster (Invited)
Understanding and Controlling Read Noise in VCM-based RRAM
Memrisys, DarmstadtDarmstadt, Germany, 5 Oct 2026 - 8 Oct 2026
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Poster (After Call)
Denoising Strategy for VCM-based ReRAM Devices
European Symp. on Reliability of Electron Devices, Failure Physics and Analysis, ESREF, ViennaVienna, Austria, 21 Sep 2026 - 24 Sep 2026
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Contribution to a conference proceedings
The Influence of Residual Ion Drift during Programming of Chip-Integrated Nanoscale HfO2-based Memristive Devices
International Conference on Neuromorphic Computing and Engineering, AachenAachen, Germany, 28 Jun 2026 - 2 Jul 2026
2 pp. (2026)
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Contribution to a conference proceedings
Reliable integrate-and-fire neurons realized with volatile Ag/HfO2/Pt electrochemical metallization cells
International Conference on Neuromorphic Computing and Engineering, AachenAachen, Germany, 28 Jun 2026 - 2 Jul 2026
2 pp. (2026)
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Contribution to a conference proceedings
2T1R RRAM with Complementary Transistor Sizing for Coarse-to-Fine Conductance Tuning
International Conference on Neuromorphic Computing and Engineering, AachenAachen, Germany, 28 Jun 2026 - 2 Jul 2026
2 pp. (2026)
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Contribution to a conference proceedings
Impact of extra peripheral resistance on VMM in RRAM arrays
International Conference on Neuromorphic Computing and Engineering, AachenAachen, Germany, 28 Jun 2026 - 2 Jul 2026
2 pp. (2026)
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Conference Presentation (Other)
Investigation of the transient behaviour of volatile electrochemical metallization cells operated in integrate-and-fire neuron circuits
CIMTEC 2026, PerugiaPerugia, Italy, 21 Jun 2026 - 25 Jun 2026
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Conference Presentation (Other)
Effect of Residual Ion Drift during Programming of CMOS-Integrated Nanoscale HfO2-based Memristive Devices
CIMTEC 2026, PerugiaPerugia, Italy, 21 Jun 2026 - 25 Jun 2026
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Contribution to a conference proceedings
Novel M-CNN design fostering gradual switching of InGaZnO(IGZO)-based memristive devices
2026 IEEE International Symposium on Circuits and Systems (ISCAS), ShanghaiShanghai, China, 24 May 2026 - 28 May 2026
IEEE 5 pp. (2026) [10.1109/ISCAS66217.2026.11562042]
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All known publications ...
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