| Home > Publications database > High-Fidelity Electron Spin Gates for Scaling Diamond Quantum Registers |
| Journal Article | FZJ-2025-03459 |
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2025
APS
College Park, Md.
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Please use a persistent id in citations: doi:10.1103/PhysRevX.15.021069 doi:10.34734/FZJ-2025-03459
Abstract: Diamond is a promising platform for quantum information processing as it can host highly coherent qubits that could allow for the construction of large quantum registers. A prerequisite for such devices is a coherent interaction between nitrogen-vacancy (NV) electron spins enabling scalable entanglement. Entanglement between dipolar-coupled NV spin pairs has been demonstrated but with a limited fidelity, and its error sources have not been characterized. Here, we design and implement a robust two-qubit gate between NV electron spins in diamond and quantify the influence of multiple error sources on the gate performance. Experimentally, we demonstrate a record gate fidelity of 𝐹2q=(96.0±2.5)% under ambient conditions. Our identification of the dominant errors paves the way towards NV-NV gates beyond the error correction threshold.
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