Journal Article

FZJ-2025-03781

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Exploiting read noise of filamentary VCM ReRAM for robust TRNG

Schnieders, K. (Corresponding author)FZJ* ; Bai, P. ; Wang, Y.FZJ* ; Kempen, T. ; Sarantopoulos, A.FZJ* ; Wouters, D. ; Rana, V.FZJ* ; Dittmann, R.FZJ* ; Waser, R.FZJ* ; Menzel, S.FZJ* ; Wiefels, S.FZJ*

2025
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TED.2025.3611916

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2025

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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