Journal Article

FZJ-2025-03833

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of Trap Depth on the Steady‐State and Transient Photoluminescence in Halide Perovskite Films

Hüpkes, J.FZJ* ; Rau, U.FZJ* ; Kirchartz, T. (Corresponding author)FZJ*

2025
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/aenm.202503157

Abstract: Within the field of halide perovskites, trap-assisted recombination is often considered to be synonymous with first-order recombination, that is, recombinationthat scales linearly with the charge-carrier concentration. However, the standard Shockley-Read-Hall statistics naturally predict that trap-assisted recombination can have any scaling between linear and quadratic with carrier density, depending on the position of the trap or defect that enables recombination. In an intrinsic semiconductor, the shallower a trap is, the more the recombination rate will scale quadratically with carrier density, and the more it will resemble radiative recombination in its behavior in any transient experiment. Here, the theoretical implications of the trap depth in general and shallow traps in particular on transient and steady-state experiments applied to halide perovskite samples for photovoltaic or optoelectronic applications are discussed.

Note: Onlinefirst

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Contributing Institute(s):

1. Photovoltaik (IEK-5)
2. Photovoltaik (IMD-3)

Research Program(s):

1. 1215 - Simulations, Theory, Optics, and Analytics (STOA) (POF4-121) (POF4-121)
2. 1212 - Materials and Interfaces (POF4-121) (POF4-121)

Appears in the scientific report 2025

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 25 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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